2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics. 2N Central Semiconductor Bipolar Transistors – BJT NPN Silicon Power Transistor datasheet, inventory, & pricing. 2N from Texas Instruments High-Performance Analog. Find the PDF Datasheet, Specifications and Distributor Information.

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KD are packaged in a TO-3 case style called T41 by Teslait is a 20 amp80 voltwatt power transistor. The art of electronics 2nd ed. This page was last edited on 22 Novemberat The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps. The historically-significant xatasheet was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and catasheet an industry workhorse standard.

(PDF) 2N3054 Datasheet download

Other manufacturers around this time also would specify similar values e. From Wikipedia, the free encyclopedia. It has a transition frequency of 2. By using this site, you agree to the Terms of Use and Privacy Policy.

Variants with higher voltage ratings e. Retrieved from ” https: The robot builder’s bonanza 2nd ed. Retrieved 7 November The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, Daasheet CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor.

In other projects Wikimedia Commons. Build your own low-power transmitters: Fatasheet was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet. The team of design, production, and applications engineers received RCA Electronic Components achievement awards in In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0.


Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion.

The 2h3054 at which gain begins to drop off may be much lower, see below. Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers.

2N Datasheet pdf – Leaded Power Transistor General Purpose – Central Semiconductor

It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids. An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N The 2N is a silicon NPN power transistor intended for general purpose applications.

The 2N is a much lower power version of the 2N, rated at 25 W55 Datashwet and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists. Also the higher frequency response has improved performance when used in audio amplifiers.

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2N Datasheet, PDF – Alldatasheet

The 2N remains datawheet popular as a series pass transistor in linear power supplies and is still used in for medium- current and high- power circuits generally, including low frequency power converters although its use in audio power amplifiers and DC-to-AC inverters is now less common and its use in higher frequency switch-mode applications never was very practical. Commons category link from Wikidata.

It was produced exclusively by the Czechoslovakian electronics company Tesla. It often has a transition frequency of around 3.

Modern 2N datasheets often, but not always, specify f T of 2. Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies.

The total power dissipation written P D in most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected. The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful in new designs and are still popular for experimenters.

Graf; William Sheets With an “infinite” heatsink, that is: The KD have higher power and higher current than 2N

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